日本爱普生公司和富士通公司近日公布了他们在发展下一代铁电随机存取存储器（FRAM）技术项目的合作结果。双方的合作是从2005年6月开始的，如今，项目已成功完成并取得了预期的成果。在该项目中，两家公司联手发展铁电薄膜（通过极化存储数据）的成形、加工和评定技术，并开发了FRAM记忆磁心的工艺技术，这项技术的优点在于其具有高集成度（是传统FRAM水平的4倍）、高性能（读写速率是传统FRAM的3倍以上）和高可靠性（具有100万亿次以上的读写能力）。

出处http://www.fujitsu.com/global/news/pr/archives/month/2007/20070129-01.html

Tokyo, January 29, 2007 —  Seiko Epson Corporation (“Epson”) and Fujitsu Limited (“Fujitsu”) today announced the results of their joint project to develop next-generation Ferrorelectric Random Access Memory (FRAM)⁽¹⁾ technology. Since announcing a joint development agreement in June 2005, Epson and Fujitsu have collaborated on development of next-generation technology for FRAM non-volatile memory⁽²⁾. The joint development project was successfully completed recently and produced the anticipated results.

Through the project, the two companies developed technology for forming, processing and evaluating a new ferroelectric (PZT)⁽³⁾ film and created FRAM memory core process technology that is highly integrated (four times the level of conventional FRAM), features high performance (read/write speeds over three times faster than conventional FRAM) and boasts outstanding reliability (capable of more than one hundred trillion read/write cycles). FRAM is currently attracting attention as a cutting-edge technology for secure memory, and this level of performance is a world first. Since the ferroelectric process can be added to existing CMOS logic processes, it will be suitable for the development of mass production technologies.

Epson intends to combine the results of this joint project with its own low power consumption CMOS technology to further speed up development and commercialization of integrated large-scale integrated circuits (LSIs) for applications such as battery-operated and portable devices.

Fujitsu will proceed with development of mass production technologies based on the results of this joint project. In addition to leveraging FRAM's advantages of low power consumption and high read/write speeds in the security applications market for which FRAM is suited for, Fujitsu will create new markets for embedded FRAM microcontrollers and accommodate diverse customer needs.

Notes

1 Ferrorelectric Random Access Memory (FRAM):

Non-volatile memory that uses a ferroelectric film as the capacitor for data retention.

2 non-volatile memory:

Memory that retains data even when a device is switched off.

3 ferroelectric (PZT):

Retains data in memory by polarization.

About Epson

Epson is a global leader in imaging products including printers, 3LCD projectors and small- and medium-sized LCDs. With an innovative and creative culture, Epson is dedicated to exceeding the vision and expectations of customers worldwide with products known for their superior quality, functionality, compactness and energy efficiency. Epson is a network of 102,025 employees in 120 companies around the world, and is proud of its ongoing contributions to the global environment and to the communities in which it is located. Led by the Japan-based Seiko Epson Corp., the Group had consolidated sales of 1549.5 billion yen in fiscal 2005.

About Fujitsu

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting device technologies, highly reliable computing and communications products, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of about 4.8 trillion yen (US$40.6 billion) for the fiscal year ended March 31, 2006. For more information, please see: www.fujitsu.com.

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